1. features we declare that the material of product compliance with rohs requirements and halogen free. s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. low threshold voltage (vgs(th): 0.5v...1.5v) makes it ideal for low voltage applications. esd protected:1500v 2. device marking and ordering information 3. maximum ratings(ta = 25oc) C continuous ta = 25c C pulsed (tp 10s) 4. thermal characteristics total device dissipation, fr?4 board (note 1) @ ta = 25oc derate above 25oc thermal resistance, junctionCtoCambient(note 1) junction and storage temperature maximum lead temperature for soldering purposes, for 10 seconds 1. frC4 = 1.00.750.062 in. tl 260 oc oc/w o c ?55 +150 tj,tstg rja 328 LBSS139DW1T1G s-LBSS139DW1T1G power mosfet 200 mamps, 50 volts nCchannel sc-88 id 200 idm 800 lbss139dw1t3g j2 10000/tape&reel parameter symbol limits device gateCtoCsource voltage C continuous vgs 20 unit drainCsource voltage vdss marking shipping LBSS139DW1T1G j2 3000/tape&reel drain current vdc vdc madc parameter symbol limits 50 unit 380 mw mw/oc pd 3.05 sc88(sot - 363) leshan radio company, ltd. rev.b jan 2016 1/7
LBSS139DW1T1G, s-LBSS139DW1T1G power mosfet 5. electrical characteristics (ta= 25 oc ) off characteristics characteristic drainCsource breakdown voltage (vgs = 0, id = 250adc) zero gate voltage drain current (vgs = 0, vds = 25 vdc) (vgs = 0, vds = 50 vdc) gateCbody leakage current, forward (vgs = 20 vdc) gateCbody leakage current, reverse (vgs = - 20 vdc) on characteristics (note 2) gate threshold voltage (vds = vgs, id = 1.0madc) static drainCsource onCstate resistance (vgs = 2.75 vdc, id < 200 madc, (vgs = 5.0 vdc, id = 200 madc) forward transconductance (vds = 25 vdc, id = 200 madc, f = 1.0 khz) dynamic characteristics input capacitance (vds = 25 vdc, vgs = 0, f = 1.0 mhz) output capacitance (vds = 25 vdc, vgs = 0, f = 1.0 mhz) reverse transfer capacitance (vds = 25 vdc, vgs = 0, f = 1.0 mhz) switching characteristics 2.pulse test: pulse width 300 s, duty cycle 2.0%. gfs ms 100 - - pf pf ciss - 22.8 - coss crss - 3.5 - - 2.9 - pf typ. max. igssr - - -10 adc adc adc ohms - - unit vdc 50 - - symbol min. 0.1 vdc 0.5 igssf 5.6 10 1.5 - - - 3.5 - - - 10 ta = C40c to +85c) vgs(th) idss rds(on) - 0.5 - vbrdss (vdd = 30 vdc , vgen = 10 v,rg =25 ,rl =60 ,id =500 madc) turn-on delay time turn-off delay time td(off) td(on) ns - 19 - - 3.8 - leshan radio company, ltd. rev.b jan 2016 2/7
leshan radio company, ltd. rev.b jan 2016 3/7 LBSS139DW1T1G, s-LBSS139DW1T1G power mosfet 6. elrctrical characteristics curves power dissipation drain current p tot - power (w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain-source voltage (v) square wave pulse duration (sec) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 t a =25 o c 1e-4 1e-3 0.01 0.1 1 10 100 0.01 0.1 1 2 mounted on 1in 2 pad r ja : 150 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 t a =25 o c,v g =10v 0.1 1 10 100 300 1e-3 0.01 0.1 1 5 1ms 300us r d s ( o n ) l i m i t 1s t c = 25 o c 10ms 100ms dc 100us
leshan radio company, ltd. rev.b jan 2016 4/7 LBSS139DW1T1G, s-LBSS139DW1T1G power mosfet 6.elrctrical characteristics curves(con.) transfer characteristics gate threshold voltage r ds(on) - on resistance ( ? ) normalized threshold voltage v gs - gate-source voltage (v) t j - junction temperature (c) -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds = 250 a 12345678910 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 i d = 0.5 a output characteristics drain-source on resistance i d - drain current (a) r ds(on) - on resistance ( ? ) v ds - drain-source voltage (v) i d - drain current (a) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.2 0.4 0.6 0.8 1.0 3.0 v v gs = 4,5,6,8,10 v 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 v gs = 4.5v v gs = 10 v
leshan radio company, ltd. rev.b jan 2016 5/7 LBSS139DW1T1G, s-LBSS139DW1T1G power mosfet 6.elrctrical characteristics curves(con.) drain-source on resistance source-drain diode forward normalized on resistance i s - source current (a) t j - junction temperature (c) v sd - source-drain voltage (v) capacitance gate charge c - capacitance (pf) v gs - gate-source voltage (v) v ds - drain-source voltage (v) q g - gate charge (pc) -50 -25 0 25 50 75 100 125 150 0.8 1.0 1.2 1.4 1.6 r on @t j = 25 o c: 1.2 v gs = 10 v i d = 0.5 a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 2 t j = 150 o c t j =25 o c 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 frequency = 1 mhz crss coss ciss 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v ds = 10 v i ds = 0.5 a
leshan radio company, ltd. rev.b jan 2016 6/7 LBSS139DW1T1G, s-LBSS139DW1T1G power mosfet 6.elrctrical characteristics curves(con.) drain-source on resistance drain-source on resistance normalized on resistance r ds(on) ? on resistance ( ) t j - junction temperature (c) i d - drain current (a) drain-source on resistance r ds(on) ? on resistance ( ) i d - drain current (a) i d - drain current (a) v gs ? gate voltage (v) -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v gs = 4.5 v v gs = 10 v r on @t j = 25 o c: 1.2 i d = 0.5 a 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 t j = 125 o c t j = 85 o c t j = 25 o c v gs = 4.5v t j = -55 o c 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 t j = 125 o c t j = 85 o c t j = 25 o c v gs = 10v t j = -55 o c 0123456 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j =125 o c t j =25 o c t j =-55 o c
LBSS139DW1T1G, s-LBSS139DW1T1G power mosfet 7.outline and dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions or gate burrs. 8.soldering footprint 1.10 --- --- 0.043 2.00 2.20 0.07 0.078 0.086 0.004 0.90 1.00 0.027 0.035 0.039 0.20 0.25 0.006 0.008 0.01 0.006 0.009 0.15 0.22 a2 a1 0.70 d min nom max min nom 0.00 --- 0.10 0 --- c dim millimeters inches --- --- b 0.08 max a 0.003 2.00 2.10 2.20 0.078 0.082 0.086 1.80 0.15 e e1 e 1.15 1.25 1.35 0.045 0.049 0.053 l2 aaa l 0.26 0.36 0.46 0.010 0.014 0.018 0.65 bsc 0.026 bsc 0.15 bsc 0.006 bsc 0.15 0.01 bbb 0.30 0.01 ccc 0.10 0.00 ddd 0.10 0.00 leshan radio company, ltd. rev.b jan 2016 7/7
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